School/Unit: School of Physics
The role
Applications are invited for the role of Postdoctoral Researcher at the Centre for Device Thermography and Reliability (CDTR), led by Professor Martin Kuball.
This role encompasses the design, fabrication and characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Ga2O3, SiC and diamond (key enabling materials for power and RF electronics). Examples of interest include vertical GaN power transistors on native and non-native substrates, AlGaN-based high power devices and N-polar AlN-based devices.
You will have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis of devices, and simulation tools (Silvaco Victory/ATLAS, ANSYS). You will also have access to a state-of-the-art Cleanroom and the opportunity to collaborate within our 35-member team as well as with our industrial partners spanning the semiconductor supply chain.
The CDTR leads/contributes to numerous UK and international strategic programmes on power and RF electronics, including ESA programme S2CANT, EPSRC programme grant ULTRAlGaN and the £11M UKRI Innovation and Knowledge Centre REWIRE, focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding/development, to commercialization of device technology, in part co-designed with industry. This position also benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) in 2020, and various US funded programmes the CDTR is partnered in. You will have the opportunity to make a major impact on future semiconductor device technology.
What will you be doing?
You will advance wide and ultra-wide bandgap semiconductor materials device technologies and its understanding.
Responsibilities
- Responsibilities include the fabrication/processing of power semiconductor devices in the cleanroom using advanced fabrication techniques, and the electrical characterization of wide and ultra-wide bandgap materials.
- You will develop TCAD models to complement experiments, support device design and to analyse device failure, breakdown and reliability.
- You will also contribute to managing our thermal characterization laboratory, advise junior group members and support short-term industrial contract.
Required Qualifications
- A PhD or near completion in Physics, Materials Science or Engineering, or equivalent research experience in an academic, industrial or clinical setting equivalent to a PhD
- Ideally with a good publication record.
- Prior experience in semiconductor device processing/fabrication is essential (photolithography/laser writer or e-beam lithography).
- Desirable experience in interfacing and automation of lab equipment using Labview or similar, TCAD simulation and physics-based modelling.
- A willingness to work together with, and co-supervise, PhD students is necessary
Additional Information
- Contract type: Open ended with two years fixed funding
- Work pattern: 35 hours/week
- Grade: I
- Salary: £ 39,906 - £ 44,746 per annum
- School/Unit: School of Physics
- Shift pattern: Monday - Friday
- This advert will close at 23:59 UK time on Wednesday 7th October
- For informal queries please contact: Professor M. Kuball, martin.kuball@bristol.ac.uk, tel +44(0)117 928 8734.
Our strategy and mission
We recently launched our strategy to 2030 tying together our mission, vision and values.
Available documents
- ACAD108694 PDRA Fabrication-characterization JD.pdf
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Research Associate in Device Fabrication and Characterization employer: University of Bristol
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