Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors

Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors

Full-Time 39906 - 44746 £ / year (est.) No working from home possible
University of Bristol

At a Glance

  • Tasks: Conduct cutting-edge research on advanced semiconductor materials and devices.
  • Company: Join the University of Bristol's innovative Centre for Device Thermography and Reliability.
  • Benefits: Competitive salary, inclusive environment, and access to state-of-the-art facilities.
  • Other info: Open-ended contract with excellent career development opportunities.
  • Why this job: Make a real impact in semiconductor technology and collaborate with industry leaders.
  • Qualifications: PhD in physics, Materials Science or Engineering, with expertise in semiconductor processing.

The predicted salary is between 39906 - 44746 £ per year.

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball. This role encompasses the advanced electrical characterization of wide and ultra-wide bandgap semiconductor materials and devices, including GaN, Gallium Oxide, SiC and diamond (key enabling materials for power and RF electronics) and/or semiconductor device fabrication. Examples of interest include graded AlGaN/GaN channel and AlScN device technologies for RF applications, and vertical GaN devices for power applications.

In this role, you will have the opportunity to develop and study unique device structures, and to access the extensive electrical device testing suite available in Bristol, in addition to thermal and electric field analysis of devices, and simulation tools (Silvaco Victory/ATLAS, ANSYS). You will also have access to a state-of-the-art clean room and the opportunity to collaborate within our 35-member team as well as with our industrial partners spanning the semiconductor supply chain.

The CDTR leads numerous UK and international strategic programmes on power and RF electronics, including the ESA programme S2CANT, the EPSRC programme grant ULTRAlGaN and the Innovation and Knowledge Centre REWIRE, focusing on GaN, Ga2O3, SiC and diamond power materials and devices, from their fundamental understanding and development, to the commercialization of device technology in part co-designed with industry, a strategic investment of the UK funding agency UKRI in excess of £18M. This position also benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng) in 2020, and various US funded programmes the CDTR is partnered in.

What will you be doing? You will conduct research to advance ultra-wide bandgap semiconductor device technology and their understanding. Responsibilities include conducting research in the electrical characterization of wide and ultra-wide bandgap materials and devices, processing of semiconductor devices in a clean room using advanced fabrication techniques and developing device simulation TCAD models to complement experiments and to support device design and to analyse device failure, breakdown and reliability. You will also contribute to managing our thermal characterization laboratory, advise junior group members and support short term industrial contracts.

You should apply if Applicants should have postgraduate (PhD) experience in physics, Materials Science or Engineering, or be working towards one, or equivalent professional qualification/experience. Ideally with a good publication record. The position requires extensive expertise in advanced electrical characterization of wide and ultrawide bandgap materials and/or devices and/or semiconductor device processing, with photolithography/laser writer or e-beam lithography being an essential requirement. A willingness to work together with, and co-supervise, PhD students of the CDTR will be necessary.

Additional information:

  • Contract type: Open-ended with fixed funding until 31/03/2028
  • Work pattern: Full-Time, 35 hours per week
  • Grade: I/Pathway 2
  • Salary: £39,906 - £44,746 per annum
  • School/Unit: School of Physics

This advert will close at 23:59 UK time on 16/01/2026. For informal queries, please contact: (not applications) to Professor M. Kuball.

The job title in the University of Bristol is known as Research Associate.

Our strategy and mission: We recently launched our strategy to 2030 tying together our mission, vision and values. The University of Bristol aims to be a place where everyone feels able to be themselves and do their best in an inclusive working environment where all colleagues can thrive and reach their full potential. We want to attract, develop, and retain individuals with different experiences, backgrounds and perspectives – particularly people of colour, LGBT+ and disabled people - because diversity of people and ideas remains integral to our excellence as a global civic institution.

JOB NUMBER ACAD CONTRACT TYPE/WORK PATTERN Open ended / Full time POSTING END DATE 18 Jan 2026 FACULTY/DIVISION Faculty of Science and Engineering SALARY £39,906 - £44,746 per annum

Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors employer: University of Bristol

The University of Bristol is an exceptional employer, offering a vibrant and inclusive work culture that fosters innovation and collaboration within the Centre for Device Thermography and Reliability. As a Postdoctoral Research Associate, you will have access to state-of-the-art facilities and cutting-edge research opportunities, alongside a supportive team environment that encourages professional growth and development. With a commitment to diversity and inclusion, the University aims to empower all employees to reach their full potential while contributing to groundbreaking advancements in semiconductor technology.

University of Bristol

Contact Details:

University of Bristol Recruitment Team

StudySmarter Expert Advice🤫

We think this is how you could land Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors

Tip Number 1

Network like a pro! Reach out to current or former employees at the Centre for Device Thermography and Reliability. A friendly chat can give us insider info on the team culture and what they really value in candidates.

Tip Number 2

Prepare for the interview by diving deep into the latest advancements in wide and ultra-wide bandgap semiconductors. Show us you’re not just familiar with the basics, but that you’re genuinely excited about the cutting-edge research happening at the CDTR.

Tip Number 3

Practice your pitch! Be ready to explain how your PhD experience and skills align with the role. We want to hear how you can contribute to our projects and collaborate with our team effectively.

Tip Number 4

Don’t forget to apply through our website! It’s the best way to ensure your application gets the attention it deserves. Plus, we love seeing candidates who take the initiative to engage with us directly.

We think you need these skills to ace Postdoctoral Research Associate in Advanced Electrical Analysis and/or Device Fabrication of Wide and Ultrawide Bandgap Semiconductors

Advanced Electrical Characterization
Semiconductor Device Fabrication
Photolithography
E-beam Lithography
Device Simulation (TCAD)
Thermal Characterization
Materials Science

Some tips for your application 🫡

Tailor Your Application:Make sure to customise your CV and cover letter to highlight your experience in advanced electrical characterisation and semiconductor device fabrication. We want to see how your skills align with the specific requirements of the role!

Show Off Your Research:Include details about your PhD research or any relevant projects you've worked on. We love seeing a good publication record, so don’t forget to mention any papers or presentations that showcase your expertise in wide and ultra-wide bandgap materials.

Be Clear and Concise:Keep your application clear and to the point. Use straightforward language to explain your experience and how it relates to the role. We appreciate clarity, and it helps us understand your qualifications better!

Apply Through Our Website:Don’t forget to submit your application through our official website! It’s the best way to ensure we receive all your documents and can process your application smoothly. We’re excited to hear from you!

How to prepare for a job interview at University of Bristol

Know Your Stuff

Make sure you brush up on your knowledge of wide and ultra-wide bandgap semiconductors. Be ready to discuss specific materials like GaN, SiC, and diamond, as well as their applications in power and RF electronics. Familiarity with the latest research and developments in this field will show your passion and expertise.

Showcase Your Skills

Prepare to talk about your experience with advanced electrical characterisation and semiconductor device fabrication. Highlight any hands-on experience you have with techniques like photolithography or e-beam lithography. Providing concrete examples of your past projects can really make you stand out.

Collaboration is Key

Since this role involves working within a team and advising junior members, be ready to discuss your collaborative experiences. Share examples of how you've worked with others in research settings, especially if you've co-supervised students or collaborated with industry partners.

Ask Insightful Questions

Prepare thoughtful questions about the Centre for Device Thermography and Reliability's current projects or future directions. This shows your genuine interest in the role and helps you understand how you can contribute to their mission. Plus, it’s a great way to engage with your interviewers!