GaN Systems Director

I am searching for a GaN Device Development Director for one of my esteemed clients based near Cambridge, UK.

Due to their continued success, they are looking to add a GaN Device Development Director to their team.

This person will be responsible for building technology platforms for power device design and new technology developments as well as building a world-class team who are also focused on GaN Devices.

Other responsibilities of the role include:

1. Implement DOE experimental design of power semiconductor devices, tape-out solution design and acceptance, including co-development with foundries, device testing and verification and other necessary new product verification links.
2. Analyse and organize experimental data, and use innovative thinking to transform technology in R&D work into new products and intellectual property.
3. Be responsible for technical support for external customers.
4. Performing TCAD process and device simulations, and layout design.

To be considered for this GaN Device Development Director , the successful candidates will have a degree in microelectronics or electronics engineering with a proven background in Power IGBTs and other devices.

If this GaN Device Development Director position is of interest, then please apply with an up-to-date CV and contact information.

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