At a Glance
- Tasks: Lead the development of innovative Power Trench MOSFET technologies using advanced TCAD simulation.
- Company: Join Nexperia, a leader in semiconductor technology with a commitment to innovation and sustainability.
- Benefits: Enjoy competitive salary, flexible working, generous leave, and professional development opportunities.
- Other info: Be part of a diverse team dedicated to inclusion and sustainability, with excellent career growth potential.
- Why this job: Shape the future of semiconductor technology and make a real impact in a collaborative environment.
- Qualifications: MSc or PhD in Electrical Engineering or Physics, with experience in device engineering and TCAD tools.
The predicted salary is between 60000 - 80000 £ per year.
At Nexperia Manchester, we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer, you will play a critical role in shaping next‑generation device concepts, driving technology optimisation, and influencing early‑stage decisions that define our future products. You will act as a senior technical contributor within BGMOS, applying first‑principles device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems, collaborating across functions, and turning simulation insights into real‑world semiconductor technologies.
What you will do
- Lead the TCAD‑driven development and optimisation of Power Trench MOSFET technologies.
- Explore new device architectures, analyse performance trade‑offs, and translate simulation outcomes into process and layout requirements.
- Support technology roadmaps, contribute to feasibility studies, and troubleshoot device‑level issues across development and production.
- Collaborate closely with Process Integration, Product Development, Design, Manufacturing and Foundry partners, acting as a technical anchor for early‑stage innovation.
Key responsibilities
- Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation.
- Perform electrostatic, thermal and reliability‑relevant simulations to guide device decisions.
- Design and refine cell structures, termination schemes, and next‑generation device concepts.
- Support technology roadmaps with quantitative trade‑off and feasibility analysis.
- Translate simulation insights into process, layout and structural requirements.
- Conduct day‑to‑day TCAD simulations, documentation, silicon learning support (splits, DOE, calibration), and troubleshooting of device‑level issues.
- Engage in regular technical exchanges with Process Integration, Product Development, Design, Manufacturing and Foundry partners.
- Contribute to intellectual property generation and early‑stage concept definition.
What you will deliver
- High‑quality TCAD simulation outputs and device concept evaluations.
- Optimised device architectures and termination schemes.
- Quantitative trade‑off analyses supporting technology roadmap decisions.
- Clear technical documentation and communication of simulation insights.
- Contributions to silicon learning cycles and device‑level troubleshooting.
- Technical inputs that influence product development and industrialisation.
- IP disclosures and innovation proposals.
- Strong cross‑functional collaboration across BGMOS and manufacturing partners.
What you will need
Essential requirements
- MSc or PhD in Electrical Engineering, Physics, or a related field.
- Several years’ experience in device engineering and TCAD‑based technology development.
- Strong understanding of semiconductor device physics.
- Deep expertise with TCAD tools (e.g. Synopsys Sentaurus).
- Experience with Power MOSFET device concepts, ideally trench‑based.
- Ability to analyse performance, reliability and manufacturability trade‑offs.
- Strong analytical and problem‑solving mindset.
- Clear, structured technical communication skills.
- Ability to travel occasionally as required.
Beneficial
- PhD focused on power semiconductor devices.
- Industrial or foundry experience in Power MOSFET technology.
- Experience with process integration or layout‑driven device optimisation.
- Knowledge of high‑field effects, ruggedness (UIS) and reliability mechanisms.
- Understanding of foundry developments and process transfers.
- Proactive, innovative mindset with the ability to challenge assumptions.
Your benefits will include
- Excellent starting salary, Annual Incentive Plan of up to 20%, contributory pension scheme up to 9%, recognition rewards scheme, EV salary sacrifice scheme, income protection, and 12× salary life assurance policy.
- Health & Wellbeing – 33 days annual leave, hybrid and flexible working, flexible benefits scheme, enhanced parental leave, on‑site medical centre, enhanced sick pay, subsidised canteen, employee assistance programme, retail and entertainment discounts, a variety of sports and social clubs.
- Professional Development – Possibility for funded academic support up to PhD level, employee goal setting and development plans, huge growth potential both internally and globally within the business via both management and technical pathways.
- Corporate Social Responsibility & Sustainability – A global commitment to becoming carbon neutral by 2035, working with suppliers who embrace and comply with the Nexperia Supplier Code of Conduct, paid time off for every employee to support charitable work up to four times per year.
- Diversity, Equity & Inclusion – Corporate members of Neurodiversity in Business and a Disability Confident Employer. Dedicated Employee Resource Groups for Neuroinclusion, the LGBTQ+ community, and Women in Nexperia, with a commitment to increase women in management positions to 30% by 2030.
D&I Statement
As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.
In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.
Principal Device Engineer in Manchester employer: Nexperia
Nexperia is an exceptional employer that fosters a dynamic and energetic work culture, where innovation and collaboration are at the forefront. With a strong commitment to employee growth and development, we offer numerous opportunities for advancement within our global GaN team, allowing you to make a meaningful impact in the semiconductor industry. Join us in a supportive environment that rewards passion and dedication, and be part of a company that values your contributions as we shape the future of power discretes together.
StudySmarter Expert Advice🤫
We think this is how you could land Principal Device Engineer in Manchester
✨Tip Number 1
Network like a pro! Reach out to current employees at Nexperia through LinkedIn or industry events. A friendly chat can give you insider info and maybe even a referral.
✨Tip Number 2
Prepare for those interviews! Brush up on your TCAD simulation knowledge and be ready to discuss how you've tackled complex device engineering problems in the past. Show them you're the deep thinker they need!
✨Tip Number 3
Don’t just wait for job openings—create your own opportunities! Apply directly through our website and express your passion for Power Trench MOSFET technologies. Your enthusiasm can set you apart!
✨Tip Number 4
Follow up after interviews! A quick thank-you email can keep you fresh in their minds and show your genuine interest in the role. Plus, it’s a great chance to reiterate why you’re the perfect fit!
We think you need these skills to ace Principal Device Engineer in Manchester
Some tips for your application 🫡
Tailor Your Application:Make sure to customise your CV and cover letter to highlight your experience with TCAD tools and Power MOSFET technologies. We want to see how your skills align with the role, so don’t hold back on showcasing your relevant projects!
Showcase Your Problem-Solving Skills:As a Principal Device Engineer, you'll be tackling complex challenges. Use your application to share specific examples of how you've solved tough problems in the past. We love seeing that analytical mindset in action!
Keep It Clear and Structured:When writing your application, clarity is key! Use a structured format to present your qualifications and experiences. This helps us quickly understand your background and how you can contribute to our team.
Apply Through Our Website:We encourage you to submit your application directly through our website. It’s the best way for us to receive your details and ensures you’re considered for the role. Plus, it’s super easy!
How to prepare for a job interview at Nexperia
✨Know Your TCAD Tools
Make sure you brush up on your knowledge of TCAD tools, especially Synopsys Sentaurus. Be prepared to discuss how you've used these tools in past projects and the insights you've gained from them. This will show your technical depth and readiness for the role.
✨Understand Device Physics
Dive deep into semiconductor device physics, particularly around Power MOSFETs and trench-based concepts. Be ready to explain complex ideas simply, as this will demonstrate your ability to communicate effectively with cross-functional teams.
✨Prepare for Problem-Solving Scenarios
Expect to tackle some real-world problems during the interview. Think about past challenges you've faced in device engineering and how you approached them. Highlight your analytical mindset and problem-solving skills, as these are crucial for the Principal Device Engineer role.
✨Showcase Collaboration Skills
Since this role involves working closely with various teams, be prepared to discuss your experience in cross-functional collaboration. Share examples of how you've successfully worked with process integration, product development, or manufacturing partners to drive innovation.