At a Glance
- Tasks: Lead the development of next-gen GaN power devices and drive innovative solutions.
- Company: Join Nexperia, a leader in semiconductor technology with a focus on diversity.
- Benefits: Competitive salary, inclusive culture, and opportunities for professional growth.
- Other info: Be part of a global team committed to innovation and inclusivity.
- Why this job: Shape the future of power devices and tackle complex engineering challenges.
- Qualifications: MSc/PhD in relevant field and experience in GaN device development.
The predicted salary is between 60000 - 80000 £ per year.
Join Nexperia and drive the development of next‑generation GaN power devices. In this senior role, you will provide technical leadership in device architecture, simulation, and optimization—translating advanced device physics into high‑performance, manufacturable solutions.
Responsibilities
- Lead device architecture definition and optimization for GaN technologies
- Own performance targets and balance trade‑offs across performance, reliability, and manufacturability
- Drive TCAD simulation, modeling, and design to support technology and product development
- Collaborate with cross‑functional teams across process, characterization, reliability, and product engineering
- Support industrialization by delivering robust, scalable device concepts
Qualifications
- Degree (MSc/PhD) or equivalent in semiconductor physics, electrical engineering, or related field
- Proven experience in GaN or wide‑bandgap device development
- Strong expertise in device physics, TCAD simulation, and semiconductor design
- Track record of leading complex, multidisciplinary technical projects
- Analytical, self‑driven, and collaborative mindset in an international environment
Join our growing global GaN team and help shape the future of power discretes. We are seeking talented individuals with deep technical expertise, an open mindset, and a drive to solve complex challenges and turn ideas into practical, scalable solutions.
Equal Opportunity Employer
As an equal‑opportunity employer, Nexperia values diversity and inclusion. Our recruitment process is accessible to all, and we consider all applicants fairly, providing a safe work environment and reasonable adjustments where requested. In addition, we offer employees the possibility to join resource groups such as the Pride Network Group or global and local Women’s groups. Nexperia is committed to increasing women in management positions to 30% by 2030.
(Senior) Principal Device Engineer (m/f/d) - GaN Power Devices in Manchester employer: NEXPERIA B.V.
Nexperia is an exceptional employer that fosters a collaborative and inclusive work culture, making it an ideal place for talented individuals to thrive. With a strong commitment to employee growth, we offer opportunities for professional development in cutting-edge GaN power device technology, while promoting diversity through initiatives like the Pride Network Group and women's resource groups. Join us in our state-of-the-art facilities, where your expertise will contribute to shaping the future of power discretes in a supportive and innovative environment.
