Research Associate in High‑Speed Organic Opto‑Electronics (HiSOPE)

Full Time (1FTE), Fixed Term for 20 months

Annual Leave 33 days, plus 9 buildings closed days (and Christmas Eve when it falls on a weekday).

HiSOPE (High‑Speed Organic Photonics and OptoElectronics) is an EIC Pathfinder “Responsible Electronics” project under Horizon Europe (Grant 101161573), with partners including CNRS, CEA‑Leti, TU Eindhoven, Kaunas University of Technology, St Andrew University, and University Sorbonne Paris Nord. The total budget is €3.07M. Its aim is to develop sustainable, high‑speed organic opto‑electronic materials, devices and systems as lower‑impact alternatives to III–V platforms.

The role requires circuit, RF/microwave and measurement expertise to support demonstrators that drive high‑speed OLEDs, collect photodiode signals, and validate system‑level links.

Design, implement and characterise high‑speed electronic and RF front‑ends to drive OLEDs with high‑voltage nanosecond pulses, interface them with high‑bandwidth photodiode receive chains, and perform full EM and calibration workflows on bespoke PCB fixtures that validate link performance for optical interconnects / wireless light communications demonstrators within HiSOPE.

• Conduct and disseminate original research aligned with the project and in collaboration with the team; work as part of the broader HiSOPE project to help organize events and/or support the work of the team as needed; contribute to outreach and impact engagement activities of the project.
• Work closely with senior decision makers in the industry to enable a programme of work and the measurement of this; participate in, and develop, networks and collaborations both internally and externally to the Division/School/University.
• Identify appropriate sources of funding and help prepare research proposals for funding bodies.
• Demonstrate initiative in making routine decisions in order to manage and achieve project deliverables and deadlines.
• Design high‑voltage, fast‑edge pulse drivers (ns to sub‑ns rise/fall where feasible) for OLED excitation, including device protection, impedance control and EMI mitigation; architect low‑inductance current paths, gate‑drive schemes (e.g., GaN/Si MOSFET drivers), and snubbers tailored to OLED stack constraints and test coupons used in HiSOPE.
• Layout controlled‑impedance CPW/microstrip transitions from drivers to OLED fixtures; model launch structures, vias, and ground‑reference strategies to >GHz bandwidths; co‑design bespoke PCB test fixtures for device‑under‑test (DUT) sockets, with 3D EM simulation (CST/ADS Momentum) to predict S‑parameters, radiation, resonances, and thermal aspects.
• Design transimpedance amplifiers (TIA) for fast, including stability/peaking control, input capacitance management, and ESD; implement on‑board calibration standards and perform LRM/TRL calibrations (VNA) from coax to CPW launches for de‑embedded S‑parameters.
• Extract behavioural models of the OLED electro‑optical transfer and PD/TIA chain (e.g., Volterra/memory polynomial, Wiener–Hammerstein) from measured data; apply digital pre‑distortion (DPD) to meet waveform fidelity and bandwidth targets; integrate electronic front‑ends with HiSOPE device stacks in collaboration with materials/device partners; contribute to optical interconnect and wireless light communication system demos.
• Maintain rigorous documentation; contribute to deliverables, publications and consortium reviews; present results at portfolio activities within EIC Responsible Electronics.

• PhD (or close to completion) in Electrical/Electronics Engineering or related field, with a focus on high‑speed circuits/RF.
• Evidence of a developing publication record.
• Experience or desire to work with those from other disciplines.
• Evidence of excellent administrative and project management skills.
• Evidence of self‑motivation and the ability to work independently.
• Evidence of excellent oral and written communication skills.
• Excellent time management skills including the ability to prioritise workload.
• Proven experience designing high‑voltage, fast‑rise pulse circuits and/or RF/microwave PCB layouts.
• Hands‑on 3D EM simulation of PCB/fixture structures and correlation to measurements.
• Strong background in photodiode front‑ends (TIAs), noise/stability analysis, and GHz‑class measurement techniques.
• Practical experience with vector network analyzers and on‑PCB LRM/TRL calibration/de‑embedding.
• Proven experience in behavioural modelling and DPD (MATLAB/Python).

• Evidence of success in attracting research grants/external funding and delivering on externally funded research projects.
• Evidence or knowledge to support international activities.
• Evidence of a basic knowledge of the Higher Education context and regulatory framework.
• Familiarity with organic/OPTO device physics (OLED stacks, drive limits, degradation, optical modulation bandwidths).
• Experience with high‑speed optical links or wireless light communication (LiFi/VLC) demonstrators.

Please submit via the Heriot‑Watt on‑line recruitment system (1) Cover letter describing their interest and suitability for the post; (2) Full CV. Applications can be submitted until midnight on Thursday 16th April 2026.

Heriot‑Watt University is committed to securing equality of opportunity in employment and to the creation of an environment in which individuals are selected, trained, promoted, appraised and otherwise treated on the sole basis of their relevant merits and abilities. Equality and diversity are all about maximising potential and creating a culture of inclusion for all. Heriot‑Watt University values diversity across our University community and welcomes applications from all sectors of society, particularly from underrepresented groups.

At Heriot Watt we are passionate about our values and look to them to connect our people globally and to help us collaborate and celebrate our success through working together. Our research programmes can deliver real world impact which is achieved through the diversity of our international community and the recognition of creative talent that connects our global team. Our flourishing community will give you the freedom to challenge and to bring your enterprising mind and to help our partners with solutions that can be applied now and in the future.