At a Glance
- Tasks: Lead the development of advanced GaN power devices and tackle complex technical challenges.
- Company: Global semiconductor innovator reshaping power conversion technologies.
- Benefits: Competitive salary, career growth, and collaboration with leading experts.
- Other info: Dynamic, multidisciplinary environment with opportunities to mentor and grow.
- Why this job: Make a real impact in cutting-edge technology across various industries.
- Qualifications: MSc/PhD in relevant fields and experience in semiconductor device development.
The predicted salary is between 60000 - 80000 £ per year.
Our client is a global semiconductor innovator developing next‑generation Gallium Nitride (Ga N) power technologies that are helping reshape power conversion across AI infrastructure, renewable energy, industrial automation, data centres, electric mobility and advanced robotics.
As part of a growing wide‑bandgap semiconductor team, you will play a key role in developing and optimising advanced Ga N power devices, helping translate cutting‑edge device physics into robust, scalable products used in real‑world applications.
This is an opportunity to work on complex technical challenges, influence future technology roadmaps and collaborate with leading experts across device development, process technology and product engineering.
Responsibilities Lead the development and optimisation of advanced Ga N power device architectures.
Define device performance goals and balance trade‑offs between performance, reliability and manufacturability.
Drive TCAD simulation, modelling and device design activities to support technology and product development.
Analyse device behaviour and identify opportunities to improve efficiency, robustness and overall performance.
Collaborate closely with process integration, characterisation, reliability and product engineering teams.
Support the industrialisation of new device concepts and technologies.
Contribute technical expertise to strategic technology and product roadmaps.
Lead complex technical projects and drive innovation within a multidisciplinary global environment.
Mentor junior engineers and contribute to the growth of the wider engineering team.
Requirements MSc, Ph D or equivalent in Semiconductor Physics, Electrical Engineering, Microelectronics or a related discipline.
Proven experience developing semiconductor devices, ideally within Ga N, Si C or other wide‑bandgap technologies.
Strong understanding of semiconductor device physics and power semiconductor design.
Hands‑on experience with TCAD simulation tools and device modelling.
Experience optimising device performance, reliability and manufacturability.
Ability to solve complex technical challenges using both analytical and simulation‑based approaches.
Experience working across multidisciplinary teams including process, reliability and product engineering.
Strong communication skills and ability to influence technical decisions.
Highly Desirable Direct experience with Ga N power devices.
Experience with HEMT structures, p‑Ga N, e‑mode or other advanced Ga N technologies.
Knowledge of Ga N‑on‑Silicon or other wide‑bandgap process technologies.
Experience supporting technology transfer or industrialisation activities.
Understanding of device reliability mechanisms and failure analysis.
Experience leading technical projects within a semiconductor R
Senior Development Engineer (M/F/D) employer: DSJ Global
As a leading global semiconductor innovator, our company offers an exceptional work environment for Senior Development Engineers, fostering a culture of collaboration and innovation. Employees benefit from opportunities to work on cutting-edge technologies in a dynamic industry, with access to professional development and mentorship from industry experts. Located in a vibrant tech hub, we provide a stimulating atmosphere that encourages creativity and growth, making it an ideal place for those looking to make a meaningful impact in the field of power conversion.
