Research Associate in Molecular Beam Epitaxy

We are recruiting for a Research Associate who will be based at the EPSRC National Epitaxy Facility in Sheffield in the School of Electrical and Electronic Engineering. You will carry out original research on III-V semiconductor epitaxy contributing to a number of research projects in the areas of quantum technologies and integrated photonics. The Facility currently supports over £100M of research grants in more than 30 UK Universities and plays a major role in UK semiconductor research through the provision of world class epitaxial materials.

You will be responsible for the development of molecular beam epitaxy (MBE) of III-V semiconductors, such as As, P, Sb or Bi-based, and will have access to three MBE reactors in the Facility as well as major infrastructure for characterization and device fabrication. You will develop epitaxy techniques for major innovations, including site-control of quantum dots, selective area growth, hybrid metal-semiconductor structures, and new types of mixed materials for lasers and detectors. You will also work with a range of collaborators and users of the Facility and will play a critical role in the development of unique and pioneering device concepts through world-class advanced MBE growth.

This post provides an ideal and exciting opportunity to make a difference in this highly topical field and to lead high quality research in collaboration with leading researchers and industry in a National Facility.

• Conduct internationally recognised research in MBE growth of III-V semiconductor materials in the National Epitaxy Facility.
• Support the development of innovative new device concepts through the provision of world-class MBE-grown epitaxial wafers.
• Contribute to overall support and management of the MBE reactors in the department including capability development, H&S management, repairs and maintenance management, upgrades, and quality control, in collaboration with other epitaxy colleagues and technicians in the School and Faculty.
• Contribute to the overall reputation of the University, School and National Epitaxy Facility as a centre of excellence in MBE epitaxy through the development of internationally leading epitaxy research and its dissemination in leading international journals and conferences.
• Contribute to the training and supervision of students, and the provision of training courses and outreach activities for users of the National Facility and collaborating colleagues, including industrial partners.
• Maintain excellent records and documentation of epitaxial growth following the Facility’s ISO9001-certified Quality Management procedures.
• Communicate and report regularly in a highly professional manner to a range of stakeholders.
• As a member of staff you will be encouraged to make ethical decisions in your role, embedding the University sustainability strategy into your working activities wherever possible.
• Carry out other duties, commensurate with the grade and remit of the post.

Our diverse community of staff and students recognises the unique abilities, backgrounds, and beliefs of all. We foster a culture where everyone feels they belong and is respected. Even if your past experience doesn’t match perfectly with this role's criteria, your contribution is valuable, and we encourage you to apply. Please ensure that you reference the application criteria in the application statement when you apply.

• Hold or be close to completing a PhD in Molecular Beam Epitaxy (or a related subject) (or have equivalent experience).
• Strong background in semiconductor epitaxy with evidence for achievements in new material or device development.
• Knowledge and experience of materials analysis techniques for semiconductor wafers including XRD, ECV, AFM, SEM, PL, Hall effect, SIMS.
• Experience of designing and developing epitaxy research methods leading to high quality epitaxy results.
• Demonstrable knowledge of the broader field of semiconductor device physics and engineering.
• Knowledge of fabrication methods, test and analysis of semiconductor devices and their relationship to high quality epitaxy.
• Experience in the independent operation and management of MBE or similar epitaxy equipment including a thorough understanding of the requirements for its safe operation.
• Experience of publishing in peer-reviewed journals.
• Excellent written and verbal communication skills, including experience writing publications/reports and presenting your findings to a range of audiences.
• Ability to work effectively within a team environment including individuals both internal and external to the University.
• Ability to plan own workload and prioritise conflicting deadlines.
• Ability to make decisions and apply creative approaches to solving complex technical problems.